Maqola

Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag

R. R. KobulovInternational Solar Energy Institute, Tashkent, UzbekistanN. A. MatchanovInternational Solar Energy Institute, Tashkent, UzbekistanO. K. AtaboyevInternational Solar Energy Institute, Tashkent, Uzbekistan

Applied Solar Energyjournal2018en

ABI

Annotatsiya

The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.

Mavzular

Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Advanced Semiconductor Detectors and Materials

Identifikatorlar

DOI: 10.3103/s0003701x18020068

Iqtiboslar va manbalar

2 ta iqtibos 13 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada