Maqola

Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

A. M. RasulovFerghana Polytechnic Institute, Ferghana Str. 86, 712022 Ferghana, UzbekistanA.A. DzhurakhalovArifov Institute of Electronics, F. Khodjaev Str. 33, 700125 Tashkent, Uzbekistan

Computational Materials Sciencejournal2005en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Identifikatorlar

DOI: 10.1016/j.commatsci.2004.12.053

Iqtiboslar va manbalar

2 ta iqtibos 12 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar