Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

12 ta ish

Ish: Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

  1. Atomic collisions on solid surfaces

    Peter Sigmund

    Maqola199435 iqtibos
    ABI

  2. Atomic collisions on solid surfaces

    E.S. Parilis

    Kitob199322 iqtibos
    ABI

  3. THE STOPPING AND RANGE OF IONS IN SOLIDS

    J. F. Ziegler

    Bob198815 iqtibos
    ABI

  4. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation

    Mark T. Robinson, Ian M. Torrens

    Maqola197415 iqtibos
    ABI

  5. THE STOPPING AND RANGE OF IONS IN SOLIDS

    J. F. Ziegler

    Bob198411 iqtibos
    ABI

  6. Computer Simulation of Ion-Solid Interactions

    W. Eckstein

    Kitob19918 iqtibos
    ABI

  7. Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals

    F. F. Umarov, A. M. Rasulov, A. Kh. Khaidarov

    MaqolaIon-surface interactions and analysisRadiation effects and defects in solids20033 iqtibos
    ABI

  8. Anomalous inelastic energy losses and trajectory effects at small angle ion scattering by single crystal surface

    A.A. Dzhurakhalov, F. F. Umarov

    Maqola19983 iqtibos
    ABI

  9. Channeling: theory, observation and applications

    D. V. Morgan

    Kitob19732 iqtibos
    ABI

  10. Determination of adatom sort and adsorption sites on single crystal surfaces by ions channeling through thin films

    F. F. Umarov, A. M. Rasulov

    MaqolaCrystallography and Radiation PhenomenaApplied Surface Science19982 iqtibos
    ABI

  11. Ion Implantation: Equipment and Techniques

    H. Ryssel, H. Glawischnig

    Kitob19832 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI