Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals
F. K. KhallokovDepartment of Physics, Bukhara Medical Institute named after. Abu Ali ibn Sino, Bukhara, UzbekistanGunel ImanovaDepartment of Physics and Electronics, Khazar University, Baku, AzerbaijanS. Kh. UmarovDepartment of Physics, Bukhara Medical Institute named after. Abu Ali ibn Sino, Bukhara, UzbekistanM. Yu. TashmetovDepartment of Physics, Institute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, UzbekistanN. Z. GasanovDepartment of Phyiscs, Institute of Physics under the Ministry of Science and Education of the Republic of Azerbaijan, Baku, AzerbaijanЗ. У. ЭсановDepartment of Physics, Institute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, UzbekistanI. R. BekpulatovDepartment of Physics, Karshi State University, Karshi, Uzbekistan
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This work investigated the effect of partial replacement of sulphur atoms with selenium atoms (TlInSSe) and indium atoms with chromium atoms (TlIn0.99Cr0.01S2) on the band gap and microhardness of TlInS2 single crystals irradiated with electrons with energy of 2 MeV and a fluence of up to 1.5 × 1017 el/cm2. The band gap from the measured absorption spectra was determined using the Tauc method. It has been established that this irradiation leads to a decrease in the band gap in TlInS2, TlInSSe and TlIn0.99Cr0.01S2 crystals. It has been shown that after electron irradiation the microhardness of these crystals increased due to an increase in the size of crystallites on their surface.
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