Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Fabrication of ultrafine silicon layers on sapphire

1. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

   Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

   MaqolaIon-surface interactions and analysisTechnical Physics20198 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.108398

2. Iron ions distribution profile obtained by irradiating the silicon single crystal

   A. A. Shemukhin, A. V. Kozhemiako, Yu. V. Balakshin +1

   MaqolaIon-surface interactions and analysisJournal of Physics Conference Series20170 iqtibos

   ABIABI:AkademIndex/openalex/2017.article.000457