Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Study of Silicide Formation in Large Diameter Monocrystalline Silicon

1. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000840

2. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000841