Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   MaqolaSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20251 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.002520

3. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   MaqolaSemiconductor Quantum Structures and DevicesPhysica Scripta20251 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.002581

4. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   MaqolaRadiation Effects in ElectronicsPhysica Scripta20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.017583