Determination of parameters of the laser-induced silicon plasma by laser-induced breakdown spectroscopy
Annotatsiya
We study the properties of laser plasma at normal atmospheric pressure, which is induced on the surface of silicon under the action of an Nd:YAG laser beam with a wavelength of 1064 nm and a pulse duration of 10 ns using the method of laser spectroscopy. The spectral profiles and mechanisms of the spectrum expansion of laser plasma induced on the surface of the silicon substrate are considered. The different fitting functions were used for the analysis of plasma parameters of the Si target. The Gaussian fitting function of the spectral lines was more suitable for accurate calculations of the electron density by the Stark expansion method. The electron temperature was calculated depending on the power density of the laser light and the ratio of the intensity of two spectral lines formed by the same ionic transition, as well as using the Boltzmann equation.