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Ish: Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications

1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

   MaqolaAdvanced Memory and Neural ComputingEast European Journal of Physics20254 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.000980

2. Structural, Morphological, and Electrophysical Properties of SnO2/ZnO Heterostructures Co-deposited on Si Substrates

   Azim K. Soatov, Abdumajit R. Turayev, Sh. U. Yuldashev +1

   PreprintZnO doping and propertiesResearch Square20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.preprint.001357