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A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation

N.Yu. ArutyunovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, TashkentV. V. EmtsevA. F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, LeningradK. SchmalzInstitute of Semiconductor Physics, Academy of Sciences, Frankfurt (Oder)V. Yu. TrashchakovInstitute for Electronics, Academy of Sciences of the Uzbek SSR, Tashkent

physica status solidi (a)journal1990en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Muon and positron interactions and applications Semiconductor materials and interfaces Silicon and Solar Cell Technologies

Identifikatorlar

DOI: 10.1002/pssa.2211210243

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