Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   MaqolaIon-surface interactions and analysisTechnical Physics201513 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.095299

2. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   MaqolaNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.452998