A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films
З. А. ИсахановArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanМ. К. РузибаеваArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanБ. Е. УмирзаковArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanR. KurbanovArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
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Results of the experimental investigation of energy losses of electron passed through thin films Cu (100) with a thickness of d ≈ 420 Å at E p = 3 keV are presented. It is revealed that the surface plasmon peak disappears at a primary electron energy of ≥6 keV. For the first time, the degree of surface amorphization and area of the disordered layer are estimated by the change of elastic peak intensity during the passage of electrons through thin films of Cu (100). There is an additional energy loss of electrons peak caused by bulk plasmon, its intensity depending on the irradiation dose under ionic bombardment.
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