Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

1. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

   N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

   MaqolaSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.279523

2. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.279528

3. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003369