Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001190

2. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002963

3. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003062