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Ish: Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

1. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 iqtibos

   ABIABI:AkademIndex/openalex/2013.article.000107

2. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

   Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3

   MaqolaSemiconductor materials and devicesMaterials science forum20180 iqtibos

   ABIABI:AkademIndex/openalex/2018.article.000232