Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.279528

2. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.410284

3. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003369