Maqola

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Jean‐Baptiste RodriguezCNRS, IES, UMR 5214, F-34000 Montpellier, FranceK. MadiomananaCNRS, IES, UMR 5214, F-34000 Montpellier, FranceL. CeruttiCNRS, IES, UMR 5214, F-34000 Montpellier, FranceA. CastellanoCNRS, IES, UMR 5214, F-34000 Montpellier, FranceE. TourniéCNRS, IES, UMR 5214, F-34000 Montpellier, France

2016en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.jcrysgro.2016.01.005

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