Ushbu ishga iqtibos qilgan ishlar

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Ish: X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001215

2. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002963