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1. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

   Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

   MaqolaSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20148 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.108396