Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

1. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20192 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.000285