Ushbu ishga iqtibos qilgan ishlar

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Ish: Lateral MoS₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

1. Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

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   Maqola2D Materials and ApplicationsRSC Advances20170 iqtibos

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2. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

   Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

   MaqolaElectronic and Structural Properties of OxidesDiamond and Related Materials20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001254