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10 ta ish

Ish: Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

  1. Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

    I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12

    Maqola20088 iqtibos
    ABI

  2. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Maqola20035 iqtibos
    ABI

  3. Diffusion of boron in silicon carbide

    K. Rüschenschmidt, H. Bracht, Michael Laube +2

    Maqola20013 iqtibos
    ABI

  4. Vacancy defects in silicon carbide

    O. Girka, E. N. Mokhov

    Maqola19953 iqtibos
    ABI

  5. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  6. Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

    H. Bracht, N. A. Stolwijk, Michael Laube +1

    Maqola20002 iqtibos
    ABI

  7. Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

    Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

    Maqola20092 iqtibos
    ABI

  8. Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    P. G. Baranov, I. V. Il’in, E. N. Mokhov

    Maqola19982 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI