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Silicon solar cells with Si-Ge microheterojunctions

Б. А. АбдурахмановTashkent State Technical University, Universitetskaya st., 2, Tashkent, 700095, UzbekistanХ. М. ИлиевTashkent State Technical University, Universitetskaya st., 2, Tashkent, 700095, UzbekistanС. А. ТачилинTashkent State Technical University, Universitetskaya st., 2, Tashkent, 700095, UzbekistanA. ToshevTashkent State Technical University, Universitetskaya st., 2, Tashkent, 700095, Uzbekistan

Russian Microelectronicsjournal2012en

ABI

Annotatsiya

It was found that annealing germanium-doped single-crystal silicon at 850°C leads to the formation of internal Si-SiGe-Si microheterojunctions, which increase at an efficiency of 2.5% of solar cells fabricated on its basis.

Mavzular

Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence solar cell performance optimization

Identifikatorlar

DOI: 10.1134/s1063739712020023

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