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11 ta ish

Ish: Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Maqola195826 iqtibos
    ABI

  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 iqtibos
    ABI

  4. Physics of Semiconductor Devices

    Geoffrey Pridham

    Maqola197019 iqtibos
    ABI

  5. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Maqola197812 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa7 iqtibos
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 iqtibos
    ABI

  8. Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

    C.A Wang, D.A. Shiau, Ann Lin

    Maqola20032 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI