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Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

М. К. БахадырхановTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanKh. AzimkhuzhaevTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanН. Ф. ЗикриллаевTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanA. B. SabdullaevTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanE.U. ArzikulovTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

Semiconductorsjournal2000en

ABI

Annotatsiya

Silicon samples doped with boron and compensated by manganese were studied. The conditions for excitation of self-sustained oscillations were established and the parameters of these oscillations were determined.

Hali tarjima qilinmagan

Mavzular

Silicon and Solar Cell Technologies Force Microscopy Techniques and Applications Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/1.1187929

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