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Quantum dot heterostructures: Fabrication, properties, lasers (Review)

N. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaV. M. UstinovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaV. A. ShchukinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaP. S. Kop’evA.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, RussiaZh. I. AlfërovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaD. BimbergInstitut für Festkörperphysik, Technische Universität Berlin, 10623, Berlin, Germany
1998en
ABI

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In the present review we summarize original results where 1) we have experimentally discovered a novel class of spontaneously ordered nanostructures, namely equilibrium arrays of threedimensional, coherently strained islands on crystal surfaces; 2) we have developed a theory of spontaneous formation of semiconductor nanostructures in heteroepitaxial systems; 3) we have experimentally demonstrated the existence of a novel class of semiconductor heterostructures, namely perfect quantum dots having an atom-like energy spectrum; we have performed a detailed investigation of the optical properties of quantum dots; 4) we have fabricated quantum dot-based injection lasers demonstrating unique charactristics, namely high-temperature stability of the threshold current and ultra-high material gain.

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