Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Deep impurity levels and diffusion coefficient of manganese in silicon

1. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.001804

2. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003062

3. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

   M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

   MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.419058