Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions
Д. И. БринкевичBelarusian State University, 220013, Minsk, BelarusА. А. ХарченкоBelarusian State University, 220013, Minsk, BelarusВ. С. ПросоловичBelarusian State University, 220013, Minsk, BelarusВ. Б. ОджаевBelarusian State University, 220013, Minsk, BelarusС. Д. БринкевичBelarusian State University, 220013, Minsk, BelarusYu. N. YankovskiiBelarusian State University, 220013, Minsk, Belarus
2019en
ABI
Annotatsiya
We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В+ and Р+ ions by measuring the reflection’s spectra. It is shown that implantation reduces the refractive index of the photoresist. In the opacity region of the photoresist film, the reflection coefficient grows with an increasing implantation dose, especially in the case of P+ ion implantation. The spectral dependences of the optical length for the implanted photoresist films have two regions with anomalous dispersion near the wavelengths of 350 and 430 nm, which correspond to the absorption bands of naphthoquinone diazide molecules.
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