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18 ta ish

Ish: Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201124 iqtibos
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    MaqolaQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 iqtibos
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSemiconductor materials and interfacesSemiconductors20218 iqtibos
    ABI

  4. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 iqtibos
    ABI

  5. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19947 iqtibos
    ABI

  6. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 iqtibos
    ABI

  7. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 iqtibos
    ABI

  8. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    MaqolaSemiconductor materials and interfacesSemiconductors19994 iqtibos
    ABI

  9. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Maqola19983 iqtibos
    ABI

  10. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Maqola19732 iqtibos
    ABI

  11. OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS

    N. Holonyak, S. F. Bevacqua

    Maqola19632 iqtibos
    ABI

  12. A Mössbauer study of a two-electron acceptor impurity of zinc in silicon

    Ф. С. Насрединов, N. P. Seregin, П. П. Серегин +1

    Maqola20002 iqtibos
    ABI

  13. Generation-recombination instabilities in thin-film structures

    V. V. Kolobaev

    Maqola19992 iqtibos
    ABI

  14. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20001 iqtibos
    ABI

  15. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20151 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI