Study of GaSb doped with Te as a material for photovoltaic systems
A. Yu. LeĭdermanPhysicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanA.S. SaidovPhysicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanM. M. KhashaevPhysicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanU. Kh. RakhmonovPhysicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
ABI
Annotatsiya
The article reports the results of study of n–GaSb〈Te〉 specimens with plain ohmic contacts and demonstrates that at T > 50°C the studied structure generates current (up to 0.4 nA at T = 200°C) and voltage (up to 0.4 mV at T = 210°C). These phenomena are attributed to thermally stimulated decomposition of “shallow donor + vacancy” complexes with subsequent formation of periodic distribution of concentration of vacancies and shallow donors over the specimen length.
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