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MOSFET scaling: Impact of two-dimensional channel materials

R. GranznerFachgebiet Festkörperelektronik, Technische Universität Ilmenau, GermanyZhansong GengFachgebiet Festkörperelektronik, Technische Universität Ilmenau, GermanyW. KinbergerFachgebiet Festkörperelektronik, Technische Universität Ilmenau, GermanyFrank SchwierzFachgebiet Festkörperelektronik, Technische Universität Ilmenau, Germany

2016en

ABI

Annotatsiya

The scaling behavior of MOSFETs based on two-dimensional (2D) materials is investigated by means of numerical simulation and analytical modeling. Due to their ultimate thinness, 2D channel materials like MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> are perfectly suited to push the scaling limits beyond those of silicon. The electrostatic integrity of 2D transistors is governed by the chosen device architecture, substrate material, and gate dielectric, and, despite 2D materials are ultimately thin, by the dielectric properties of the channel. Regarding on-state performance, 2D materials with moderate transport properties like MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> become competitive at channel lengths around 5 nm, due to the degraded mobility in thin Si bodies.

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Identifikatorlar

DOI: 10.1109/icsict.2016.7998953

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