Frank Schwierz

3 ta ish

Technical University of Ilmenau,department of micro and nanoelectronic systems,Ilmenau,Germany

1. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS₂ based MOSFET

   A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

   MaqolaGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.511884

2. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.541483

3. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   BobSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 iqtibos

   ABIABI:AkademIndex/openalex/2013.chapter.000013