Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. É. AtamuratovUrganch State University, Kh. Olimjan, 14, Urganch, 220100, UzbekistanM. M. KhalilloevUrganch State University, Kh. Olimjan, 14, Urganch, 220100, UzbekistanA.E. AbdikarimovUrganch State University, Kh. Olimjan, 14, Urganch, 220100, UzbekistanZamira AtamuratovaUrganch State University, Kh. Olimjan, 14, Urganch, 220100, UzbekistanM. KittlerTechnical University of Ilmenau, Ehrenbergstrasse, 29, 98693 Ilmenau, GermanyR. GranznerTechnical University of Ilmenau, Ehrenbergstrasse, 29, 98693 Ilmenau, GermanyFrank SchwierzTechnical University of Ilmenau, Ehrenbergstrasse, 29, 98693 Ilmenau, Germany
ABI
Annotatsiya
Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate.
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