Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

Silicon is a mature material, but it is still unique for its crucial role in the microelectronic and photovoltaic sectors. Despite the vast knowledge accumulated on silicon and their alloys, this material still demands research. In this paper, the conductivity and lifetime of non equilibrium charge carriers of nickel impurities in single-crystal silicon are determined. The electrophysical properties for the silicon single crystals doped with nickel impurity by establishing optimal diffusion mode were studied with the Hall effect method and the standard method in constant electric and magnetic fields. It is shown that the generation of thermal donors is suppressed by the interaction of nickel and oxygen impurities introduced at 500 C, and it is proved that it does not affect the formation of high-temperature thermal donors formed at 700 C.

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