Positron and positronium states in semiconductors irradiated by supercurrent beams of charged particles

Annotatsiya

New experimental results on the positron annihilation in Si and GaAs semiconducting crystals irradiated by supercurrent beams of charged particles are reported. Positronium states localized in the area of radiation-induced damages of vacancy type are detected. If the supercurrent irradiation intensity is enhanced (electron, proton irradiation) the mean dimensions of defects which are positron annihilation centres are decreased. A model for destroying semiconductors by the supercurrent proton irradiation high current density in a pulse is proposed. [Russian Text Ignored].

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DOI

10.1002/pssa.2210860120

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