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Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

Yeohyeok YunDepartment of Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of KoreaJihoon SeoMemory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Republic of KoreaDonghee SonMemory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Republic of KoreaBongkoo KangDepartment of Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea

2018en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.microrel.2018.07.055

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