Ushbu ishga iqtibos qilgan ishlar

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Ish: Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   MaqolaSemiconductor materials and devicesApplied Sciences20203 iqtibos

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.006400