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Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

Yeohyeok YunDepartment of Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of KoreaJihoon SeoMemory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Republic of KoreaYoung-Kyu KwonDepartment of Electronics, Uiduk University, San 50, Yugeom-Ri, Kangdong-myon, Gyeongju, Gyeongbuk 780-910, Republic of KoreaBongkoo KangDepartment of Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea

2019en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.microrel.2019.113449

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