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Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

Linyue LiuSchool of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. [email protected]Ao LiuSong BaiLing LvSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, ChinaPeng JinState Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, 710024, ChinaXiaoping OuyangSchool of Nuclear Science and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China. [email protected]

2017en

ABI

Annotatsiya

Abstract Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors’ properties before and after deuterium-tritium fusion neutron irradiation with the total fluence of 1.31 × 10 14 n/cm 2 and 7.29 × 10 14 n/cm 2 at room temperature. Significant degradation has been observed after neutron irradiation: reverse current increased greatly, over three to thirty fold; Schottky junction was broken down; significant lattice damage was observed at low temperature photoluminescence measurements; the peaks of alpha particle response spectra shifted to lower channels and became wider; the charge collection efficiency (CCE) decreased by about 7.0% and 22.5% at 300 V with neutron irradiation fluence of 1.31 × 10 14 n/cm 2 and 7.29 × 10 14 n/cm 2 , respectively. Although the degradation exists, the SiC detectors successfully survive intense neutron radiation and show better radiation resistance than silicon detectors.

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DOI: 10.1038/s41598-017-13715-3

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