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Ish: Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

1. SiC plasma characterization produced by 3 ns pulse laser at 10 ¹⁰ W/cm ² intensity

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2. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

   M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

   MaqolaSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.011837