On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

A theory of the space-charge region generation-recombination (G-R) current in p-n junction for semiconductors with a quasicontinuous gap-state spectrum is obtained. A detailed discussion of the IG-R(U) characteristics at forward bias is given. The novel type of IG-R(U) ∝︁ exp [qU/(4/3 kT)] dependence is obtained, which is an inherent property of G-R current in semiconductors with a quasicontinuous gap-state spectrum, particularly in amorphous silicon. [Russian Text Ignored].

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