Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19884 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.244481