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12 ta ish

Ish: Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

  1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

    G. D. Watkins, J. W. Corbett

    Maqola19656 iqtibos
    ABI

  2. Positron dynamics in solids

    Werner Brandt

    Maqola19745 iqtibos
    ABI

  3. Momentum distributions of electron-positron pairs annihilating at vacancy clusters in Si

    Mikko Hakala, M. J. Puska, R. M. Nieminen

    Maqola19983 iqtibos
    ABI

  4. Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from<i>ab initio</i>Calculations

    Dmitry V. Makhov, Laurent J. Lewis

    Maqola20042 iqtibos
    ABI

  5. Stability of large vacancy clusters in silicon

    Torsten E.M. Staab, A. Sieck, M. Haugk +3

    Maqola20022 iqtibos
    ABI

  6. Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in &lt;i&gt;n&lt;/i&gt;-FZ-Si:P Crystals

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +4

    Maqola20132 iqtibos
    ABI

  7. Vacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons

    J. Kuriplach, A.L. Morales, C. Dauwe +2

    Maqola19982 iqtibos
    ABI

  8. Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    Maqola20122 iqtibos
    ABI

  9. Defects in irradiated silicon: EPR of the tin-vacancy pair

    G. D. Watkins

    Maqola19752 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI