Ushbu ishga iqtibos qilgan ishlar

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Ish: A model for the formation of amorphous Si by ion bombardment

1. Backscattering measurements of postimplantation damage profiles in silicon single crystals

   S. Kopta, E. Maydell-Ondrusz, Β. Rajchel

   MaqolaCrystallography and Radiation Phenomenaphysica status solidi (a)19780 iqtibos

   ABIABI:AkademIndex/openalex/1978.article.000065

2. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000071