Ushbu ishga iqtibos qilgan ishlar

6 ta ish

Ish: Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case

1. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (b)19685 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.531304

2. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

   A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19793 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.496738

3. Double injection of a strongly degenerate plasma. Volume controlled current regime

   S. A. Azimov, Sh. A. Gulamov, Yu. A. Katulevskii +1

   MaqolaPlasma Diagnostics and Applicationsphysica status solidi (a)19792 iqtibos

   ABIABI:AkademIndex/openalex/1979.article.000061

4. Influence of deep impurity levels on double injection in semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19721 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.605836

5. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

   D. A. Aronov, E. P. Kotov, Ya. P. Kotov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19750 iqtibos

   ABIABI:AkademIndex/openalex/1975.article.000063

6. Injection of degenerate electron-hole plasma

   Yu. A. Katulevskii

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19850 iqtibos

   ABIABI:AkademIndex/openalex/1985.article.000071