Ushbu ishga iqtibos qilgan ishlar

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Ish: New semiconductor detectors for nuclear radiation utilizing Si1-x Ge x alloy

1. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   MaqolaSemiconductor materials and interfacesInorganic Materials20051 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000180

2. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000319

3. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

   N. A. Matchanov

   MaqolaSemiconductor materials and interfacesTechnical Physics20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000326

4. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   MaqolaSemiconductor materials and interfacesInorganic Materials20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000333