Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Antistructural defects in lead chalcogenides

1. Electron exchange between neutral and ionized germanium centers in PbSe

   E. I. Terukov, É. S. Khuzhakulov

   MaqolaSemiconductor materials and interfacesSemiconductors20050 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000185

2. Mössbauer study of the Ge two-electron donor centers in PbSe

   Е. И. Теруков, E. S. Khuzhakulov

   MaqolaSemiconductor materials and interfacesSemiconductors20050 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000286

3. Two-electron exchange between neutral and ionized negative-U tin centers in lead chalcogenides

   А. В. Марченко, К. У. Бобохужаев, А. Б. Жаркой +2

   MaqolaAdvanced Chemical Physics StudiesInorganic Materials20160 iqtibos

   ABIABI:AkademIndex/openalex/2016.article.000586