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6 ta ish

Ish: Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI
  2. Physics of semiconductor devices

    Maqola19906 iqtibos
    ABI
  3. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

    Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

    Maqola19853 iqtibos
    ABI
  4. Radiation-induced space-charge buildup in MOS structures

    J.P. Mitchell

    Maqola19672 iqtibos
    ABI
  5. Sarlavhasiz

    Boshqa1 iqtibos
    ABI