Maqola

Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

A. É. AtamuratovDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanD. U. MatrasulovDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanP. K. KhabibullaevDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, Uzbekistan

Doklady Physicsjournal2010en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/s1028335810020023

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