Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Electronic structure and positron states at vacancies in Si and GaAs

1. Positron Trapping at Point Defects in Electron-Irradiated GaAs

   V. N. Brudnyı̆, A. D. Pogrebn Yak, Yu. P. Surov +1

   MaqolaMuon and positron interactions and applicationsphysica status solidi (a)19890 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000126

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   MaqolaRare-earth and actinide compoundsSemiconductors19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000107